Polishing of small composite semiconductor materials

ABSTRACT

A device includes a crystalline material within an area confined by an insulator. A surface of the crystalline material has a reduced roughness. One example includes obtaining a surface with reduced roughness by using a planarization process configured with a selectivity of the crystalline material to the insulator greater than one. In a preferred embodiment, the planarization process uses a composition including abrasive spherical silica, H 2 O 2  and water. In a preferred embodiment, the area confined by the insulator is an opening in the insulator having an aspect ratio sufficient to trap defects using an ART technique.

RELATED APPLICATIONS

This application claims the benefit of and priority to U.S. ProvisionalApplication No. 61/080,779 filed Jul. 15, 2008, inventor JenniferHydrick and James Fiorenza, entitled “POLISHING OF SMALL COMPOSITESEMICONDUCTOR MATERIALS”, the disclosure of which is hereby incorporatedby reference in its entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to planarization for semiconductorstructures or device fabrication.

2. Description of the Related Art

This section provides background information and introduces informationrelated to various aspects of the disclosure that are described and/orclaimed below. These background statements are not admissions of priorart.

Integration of lattice-mismatched semiconductor materials is one path tohigh performance devices such as complementary metal-oxide-semiconductor(CMOS) field-effect transistors (FET) due to their high carriermobility. For example, the heterointegration of lattice-mismatchedsemiconductor materials with silicon will be useful for a wide varietyof device applications. One heterointegration method involves creationof confined regions of lattice-mismatched semiconductor materials on asilicon substrate. However, planarization is typically required fordevice fabrication. Chemical mechanical polishing (CMP) of the selectedlattice-mismatched semiconductor materials is an option to smooth thesurface of the material. Low material removal rates are needed, andcreation of dishing or surface impurities must be avoided. Thus, thereexists a need to planarize a surface of lattice-mismatched materials ina confined or selectively grown area (e.g., an active region ofcrystalline materials).

SUMMARY OF THE INVENTION

Embodiments according to the present invention provide compositions,methods and apparatus to planarize confined mismatched material suitablefor device fabrication and/or devices made thereby.

In one aspect, one embodiment of the invention can provide planarizedregions (e.g., wafers) with reduced or minimal dishing and/or overpolishof the heteroepitaxial regions.

In another aspect, one embodiment of the invention is to provideplanarized regions with reduced or low levels of metallic contamination.

An aspect of one embodiment of the invention is to provide alattice-mismatched crystalline material with a reduced surfaceroughness.

In yet another aspect, an embodiment of a CMP process can planarizeconfined mismatched crystalline material (e.g., by an insulator)suitable for device fabrication.

In yet another aspect of the invention, compositions such as slurriesprovide polish selectivity for heteroepitaxial regions or materialsrelative to the confining regions or insulators.

In yet another aspect, an embodiment of a CMP process can planarize aGe—SiO₂ composite structure produced by Ge growth in SiO₂ trenches on aSi wafer.

In an alternative aspect, one embodiment the invention is provided toplanarize a crystalline material/insulator combination.

In yet another aspect of the invention, planarized heteroepitaxialregions are selected to provide designated characteristics correspondingto a resulting device.

These aspects may be especially applicable to devices incorporating ARTtechniques, including but not limited to a mixed signal applicationdevice, a field effect transistor, a quantum tunneling device, a lightemitting diode, a laser diode, a resonant tunneling diode and aphotovoltaic device. The ART devices may have crystalline materialepitaxially grown in openings or confined areas with an aspect ratio(depth/width) >1, or otherwise suitable for trapping most defects.

Additional aspects and utilities of the invention will be set forth inpart in the description which follows and, in part, will be obvious fromthe description, or may be learned by practice of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other aspects and utilities of the present generalinventive concept will become apparent and more readily appreciated fromthe following description of the embodiments, taken in conjunction withthe accompanying drawings, of which:

FIG. 1, comprising FIGS. 1( a)-1(c), respectively illustrate (a)cross-sectional TEM image of defect trapping in ART structure (e.g., 200nm trenches of Ge) where a lattice-mismatched material region above thedashed line has reduced defects, (b) schematic of proposed devicestructure showing trapped defects, and (c) an alternate configuration(e.g., confined area for crystalline material) of an ART structure.

FIG. 2 illustrates exemplary oxide removal rates as a function of slurryconcentration, oxide removal rates for slurry mix with various chemicaladditive conditions, and Ge removal rates as a function of slurryconcentration using no additives.

FIG. 3 illustrates Ge and SiO₂ removal rates determined for slurry mixescontaining NaOCl additive at low Nalco 2360 concentrations.

FIG. 4 illustrates cross-sectional SEM images of Ge ART sections ofdifferent trench widths polished with 1.4% NaOCl and 4.7% Nalco 2360 inthe slurry mix.

FIG. 5 illustrates Ge removal rates determined for slurry mixescontaining NH₄OH additive. Minimum oxide polish rate indicated.

FIG. 6 illustrates cross-sectional SEM images of Ge ART sectionspolished with 2.8% NH₄OH and 4.6% Nalco 2360 in the slurry mix (polisheddespite vibration).

FIGS. 7 illustrates Ge and SiO₂ removal rates determined for slurrymixes containing H₂O₂ additive with additional detail for a lowconcentration range (at right).

FIG. 8 illustrates cross-sectional SEM images of Ge ART sections ofdifferent composite structures polished with 0.16% H₂O₂ and 35% Nalco2360 in a slurry mix.

FIG. 9 illustrates comparison of Ge and oxide removal rates andselectivities for slurry mixes with different additive chemicals.

FIG. 10 illustrates concentration of selected metallic elements at thewafer surface for diluted slurry-additive combinations post-CMP, withcomparative data for an oxide CMP process on the same equipment and anevaluation of NaOCI on a wafer without polishing. Data is all from thefront-side of the wafer. No data shown for a given metal indicates thatthe level for that metal was below detection limits of the VPD-ICP-MSanalysis.

FIG. 11 comprising FIGS. 11( a)-11(b) illustrate cross-sectional SEMimages of germanium structure before (a) and after (b) CMP with H₂O₂additive in a slurry mix.

FIG. 12 comprising FIGS. 12( a)-12(b) illustrate pitting observed inplan-view SEM for (a) a Ge blanket film that was polished with 10% H₂O₂in a slurry mix and (b) an overpolished Ge ART sample that was polishedwith 5% H₂O₂ in a slurry mix.

FIGS. 13 shows 2 μm×2 μm AFM scan of an exemplary Ge ART sample polishedwith 0.16% H₂O₂ in the slurry mix that resulted in 30 nm of dishing andRMS roughness measured in the Ge area of 0.21 nm.

FIG. 14 comprising FIGS. 14( a)-14(b), illustrate (a) SEM image ofsignificant dishing in Ge ART sample at 5% H₂O₂ (b) TEM image of Ge ARTsample polished using one slurry mix embodiment.

FIG. 15 illustrates Ge thickness, dishing, and overpolish for thincoalesced and uncoalesced Ge ART wafers including four differentpatterned areas polished in a slurry mix embodiment for different times.

FIG. 16 is a flowchart that illustrates an embodiment of a method formaking a semiconductor device having a planarized surface.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Reference will now be made in detail to the embodiments of the presentgeneral inventive concept, examples of which are illustrated in theaccompanying drawings, wherein like reference numerals refer to likeelements throughout. The embodiments are described below in order toexplain the present general inventive concept by referring to thefigures.

The formation of lattice-mismatched materials has many practicalapplications. For example, heteroepitaxial growth of group IV materialsor compounds, and III-V, III-N and II-VI compounds on a crystallinesubstrate, such as silicon, has many applications such as photovoltaics,resonant tunneling diodes (RTD's), transistors (e.g., FET (which can beplanar or 3D (e.g., finFET), HEMT, etc.), light-emitting diodes andlaser diodes. As one example, heteroepitaxy of germanium on silicon isconsidered a promising path for high performance p-channelmetal-oxide-semiconductor (MOS) field-effect transistors (FET) and forintegrating optoelectronic devices with silicon complementary MOS (CMOS)technology. Heteroepitaxy growth of other materials (e.g., of groupIII-V, III-N and II-VI compounds and other group IV materials orcompounds) also is beneficial for these and other applications.

However, the dislocation density of the epitaxially grown material canbe unacceptably high for many applications. For example, the dislocationdensity of germanium directly grown on silicon can be as high as 10⁸-10⁹cm⁻² due to the 4.2% lattice mismatch between the twomaterials-unacceptable for most device applications. Various approachesto reducing the defect density have been pursued, includingcompositional grading, and post-epi high-temperature annealing. However,these approaches may not be optimal for integration with silicon-basedCMOS technology due to requirements for thick epi-layers and/or highthermal budgets, or due to incompatibility with selective growth at adensity suitable for CMOS integration.

Aspect Ratio Trapping (ART) is a defect reduction technique thatmitigates these problems. As used herein, “ART” or “aspect ratiotrapping” refers generally to the technique(s) of causing defects toterminate at non-crystalline, e.g., dielectric, sidewalls, where thesidewalls are sufficiently high relative to the size of the growth areaso as to trap most, if not all, of the defects. ART utilizes high aspectratio openings, such as trenches or holes, to trap dislocations,preventing them from reaching the epitaxial film surface, and greatlyreduces the surface dislocation density within the ART opening.

FIG. 1 a shows a cross section of a lattice-mismatched material 140 ofhigh quality above a defect region 155 using ART. As illustrated here, acrystalline material 140 is epitaxially grown on substrate 100 (here,for example, on the (001) surface of a silicon substrate). By confiningthe crystalline growth within an opening 120 (e.g., trench, recess orthe like) with a sufficiently high aspect ratio (e.g., 1 or greater, 0.5or greater), defects 150 formed while epitaxially growing thecrystalline material 140 travel to and end at the sidewalls (e.g.,insulator sidewalls) 110. Thus, the crystalline material 140 continuesto grow without the continued growth of the defects 150, therebyproducing crystal with reduced defects. This technique has been shown tobe effective for growing low defectivity materials such as Ge, InP andGaAs selectively on Si in trenches 200-450 nm wide and of arbitrarylength an area large enough for devices such as a FET, for example. Suchtrenches can be wider or narrower.

An embodiment of the invention is directed to a device including aplanarized lattice-mismatched material in an opening in an insulator.FIG. 1 b shows one example, illustrating a perspective view of a portionof an exemplary device. As shown in FIG. 1 b, the example includes acrystalline material 140 grown on a substrate 100 in an opening 120defined in an insulator 130 for a non-Si channel MOSFET. The substrate100 may be a crystalline material such as silicon, Ge or sapphire.Insulator 130 is preferably a non-crystalline material such as adielectric material including silicon nitride or SiO₂. The crystallinematerial 140 at least at some stage has a surface above the top surfaceof insulator 130. A planarized surface can include at least a surface ofportions of the crystalline material 140 corresponding to source, drainand gate regions of the device.

In one example, the width of the opening 120 may be 400 nm or less, 350nm or less, 200 nm or less, 100 nm or less or 50 nm or less; these sizeshave been shown to be effective for ART (of course these sizes do notneed to be used with ART). Alternatively, the width of the opening maybe 5 μm or less. In another alternative, the width of the opening may be1 μm or less. The opening may be formed as a trench (with the length ofthe trench running front to back as shown in FIG. 1 b) in which case thewidth would be considered to be perpendicular to its length and height.The length of the trench may be arbitrary. Alternatively, the length ofthe trench may be substantially larger than the width of the trench, forexample greater than 10 times larger, or greater than 100 times larger.In one example, the length of the trench is 2 μm.

It is preferred, but not necessary, that the opening 120 is used to trapdefects when epitaxially growing the crystalline material 140 using ART(aspect ratio trapping) techniques. (Aspect ratio “AR” is defined fortrenches as the ratio of the trench height/trench width.) In such acase, the aspect ratio may be greater than 1, although it possible forthe aspect ratio to be lower in ART devices, for example 0.5. In oneembodiment, the crystalline material 140 can include two differentsemiconductor materials or more than one semiconductor material (e.g.,GaAs/InP/InGaAs) such as or first, second and third materials where thefirst material can be Ge or GaAs, can be less than 100 nm or can havebonding characteristics to a substrate and the third material ispolished. Further details of example ART devices and ART techniques inwhich this invention may be incorporated may be found in U.S. patentapplication Ser. Nos. 11/436,198 filed May 17, 2006, 11/493,365 filedJul. 26, 2006 and 11/852,078 filed Sep. 7, 2007, all of which are herebyincorporated by reference.

The substrate 100 in the above examples may include a group IV elementor compound, such as germanium and/or silicon, e.g., (001) silicon. Thecrystalline material 140 may include at least one of a group IV elementor compound, a III-V or III-N compound, or a II-VI compound. Examples ofgroup IV elements include Ge, Si and examples of group IV compoundsinclude SiGe. Examples of III-V compounds include aluminum phosphide(AlP), gallium phosphide (GaP), indium phosphide (InP), aluminumarsenide (AlAs), gallium arsenide (GaAs), indium arsenide (InAs),aluminum antimonide (AlSb), gallium antimonide (GaSb), indium antimonide(InSb), and their ternary and quaternary compounds. Examples of III-Ncompounds include aluminum nitride (AlN), gallium nitride (GaN), indiumnitride (InN), and their ternary and quaternary compounds. Examples ofII-VI compounds includes zinc selenide (ZnSe), zinc telluride (ZnTe),cadmium selenide (CdSe), cadmium telluride (CdTe), zinc sulfide (ZnS),and their ternary and quaternary compounds.

The layer of insulator need not be formed as a substantially planarlayer. For example, the insulator may be formed of a thin layer thatconforms to an undulating surface of the substrate on which it iscreated. FIG. 1 c illustrates an example including a substrate that hasopenings/recesses/trenches 120 etched into the substrate 100. Aninsulating layer 180 has been formed across the substrate 100 conformingto the surface topography of the etched substrate 100. The insulatinglayer 180 is configured at the bottom of the openings/trenches to exposeportions 160 of the substrate 100 for subsequent lattice-mismatchedcrystalline material. In this case, sidewalls of the insulator 190 canbe formed by deposition on or oxidation of the substrate 100 and are notformed by a separate photolithography process. Exemplary configurationsof the trenches 120 and portions 160 are illustrated however,embodiments of the invention are not intended to be so limited, forexample, as other linear, tiered or nonlinear cross-sections may be usedfor the trenches 120 and the portions 160.

The following description in connection with FIGS. 2-15 describesexamples of how surfaces of the lattice-mismatched semiconductormaterial or crystalline material within a confined space (e.g.,crystalline material 140 within insulator 130) may be planarized orprovided with a prescribed surface smoothness. Although this descriptionis in connection with specific materials and process parameters, it willbe apparent that the description is exemplary only, and should not beconsidered to limit embodiments of the invention to such materials andprocess parameters.

Exemplary CMP embodiments according to the invention for planarizingGe—SiO₂ composite structures produced by Ge growth in SiO₂ trenches on aSi wafer will now be described. Embodiments of CMP processes can produceflat and/or co-planar planarized regions (e.g., Ge regions orGe/insulator regions) suitable for device fabrication including reducedroughness, low dishing and/or overpolish of such regions and low levelsof contamination. A slurry mix can include part abrasive, part chemicaladditive, and the remaining liquid or de-ionized (DI) water, adding upto 100% of the slurry mix. In one embodiment, the addition of H₂O₂ to adiluted colloidal slurry was determined to provide desired resultsincluding selectivity, step height, reduced surface roughness and lowresulting contaminants in composite structures.

The following materials and process parameters were used for Ge grown asdiscussed in connection with FIGS. 2-15. The starting substrates used inthis work were crystalline silicon, 200 mm diameter, p-type, and (001)oriented. A 500-nm-thick thermal oxide was grown on the substrate. Theoxide layer was patterned into trenches along [110] direction of thesilicon substrate having 180-350 nm width and 13 mm length. The trencheswere formed using conventional photolithography techniques and areactive ion etching (RIE) step. The patterned substrates were thencleaned in Pirana, SC2, and dilute HF solutions sequentially. Removal offluorocarbon residues caused by RIE was accomplished using a 25-nm-thicksacrificial oxidation and subsequent HF oxide etch. The final trenchheight was 490 nm after this cleaning procedure. Undoped Ge layers wereselectively, epitaxially grown by chemical vapor deposition (CVD) on theexposed Si substrate (either in the trenches or on a blanket Sisubstrate (e.g., a bare Si wafer)) in an industrial ASM Epsilon E2000system. This CVD system is a horizontal, cold-wall, single wafer,load-locked reactor with a lamp-heated graphite susceptor in a quartztube. Directly prior to growth, the substrates were cleaned in a dilutedHF solution and rinsed in DI (deionized) water. The substrates wereloaded into the growth chamber and baked in H₂ for 1 minute at 870° C.The pressure during the bake was set the same value as used in thesubsequent growth step, 80 Torr. The growth step used a 30 sccm germane(GeH₄) source gas flow diluted to 25% in a 20 slm hydrogen carrier gasflow. The Ge growth was performed in two steps; the first step is at400° C. for 540 sec and the second step is at 600° C. for a time periodof 1200-7000 sec. Selected samples for CMP were uncoalesced, while othersamples were grown to coalescence above the oxide trenches.

Experimental results

For the experimental results described below, CMP was performed on these200 mm wafers on either a Strasbaugh 6EC or an IPEC 472 CMP tool with aspiral k-groove IC1000-Suba IV stacked pad, a 3M S60 diamondconditioner, and variable concentrations of Nalco 2360 slurry (70 nmcolloidal silica). Nalco 2360 slurry is a commercially availablecolloidal silica polishing slurry having submicron silica particles inan aqueous solution. Either 6% NaOCl, 30% NH4OH, or 30% H2O2 solutionwas added to the diluted slurry to enhance the Ge removal rate. Thus,each slurry mix consisted of part Nalco 2360, part chemical additive,and the remainder was deionized water (DI) water, adding up to 100% ofthe slurry mix. Concentration percentages listed beyond this point referto the fraction of Nalco 2360, NaOCl solution, NH4OH solution, H2O2solution, or DI water in the slurry mix. Exemplary concentration rangesof the chemicals tested in the slurry mix were 0-2.4% of NaOCl, 0-100%NH4OH, and 0-10% H2O2. Polish conditions for the Strasbaugh 6EC toolfollow. Before CMP, the pad break-in is accomplished with 5 lbs applied,50 rpm conditioner speed, 65 rpm table speed, 200 mL/min of DI water, 25sweeps of the conditioner arm (back and forth), and 36 seconds/completesweep. A precondition step was used to spread slurry over the table atthe beginning of each run, using parameters 5 lbs applied, 150 mL/min ofslurry mix, 20 rpm conditioner speed, 20 rpm table speed, 2-5center-to-edge sweeps, and 11 seconds/ partial sweep. The CMP processincluded 10 seconds of ramp-up, a polish step, and 25 seconds oframp-down and rinse steps. Polishing time for the polish step wasvaried, and in-situ sweep pad conditioning of 5 lbs (22 sec/completesweep) was used throughout the CMP process. The down-force during thepolish step was 3 PSI, slurry feed rate 150 mL/min, table speed 45 rpm,and wafer chuck speed 41 rpm. Automatic hydro-load and polish were usedfor all samples, and back pressure and ring force were optimized asneeded. The table is cooled by building cooling water, and tabletemperature varied between 60-85° F. during polishing. Wafers polishedwith the IPEC 472 CMP tool used similar conditions.

The post-CMP clean, using the Verteq Goldfinger single-wafer megasonicpost-CMP tool, consisted of a contamination spin-off, 60 sec processtime, 30 sec rinse time, and 30 sec spin dry time. Megasonic power of125 W was used for all samples. Only DI water (1.7-3L/min) was used formost Ge and Ge ART samples, while a diluted standard clean 1 (SC-1)solution was used in the megasonic clean for all wafers with an oxidefilm. The concentration of the SC-1 solution was 50 mL/min NH4OH (30%)and 100 mL/min H2O2 (30%) in 1.7-3L/min of DI water. Wafers which werepolished on the IPEC 472 CMP were cleaned using an OnTrak brushscrubber.

Evaluation of the material removal rate (RR) was based on CMP of blanketoxide and Ge films on Si. Pre-CMP and post-CMP film thicknesses weremeasured by interferometry (Filmetrics) or ellipsometry (Sopra).Endpointing of the patterned ART samples was achieved initially byvisual and optical microscope inspection, and later by calibrating CMPprocess time with cross-sectional scanning electron microscope (SEM)analysis. However, alternative known endpointing techniques may be used.The patterned sample thicknesses after polishing were measured in anAmray 3300FE or Zeiss Supra 40 field-emission SEM. Transmission electronmicroscopy (TEM) samples, prepared by mechanical polishing and Ar ionmilling, were observed in a JEOL JEM 2100 TEM. VPD-ICP-MS was used tomeasure the level of metallic contamination on the surface of baresilicon or blanket oxide wafers after CMP.

Experimental slurry investigation included slurry mixtures of dilutedNalco 2360 alone and respectively combined with either NaOCl, NH₄OH, orH₂O₂ tested for suitability for CMP of Ge (e.g., confined Ge). Resultsfor each slurry mixture are described separately first; followed bycombined selectivity and metals data. Factors analyzed can include atleast selectivity, removal rate, and planarized surface characteristicssuch as smoothness, dishing, overpolish, step height and post-CMPsurface metallic contamination levels. One preferred polishing rateratio (selectivity) is Ge faster than SiO₂ or Ge: SiO₂ selectivity atleast>1:1. Another preferred target Ge: SiO₂ selectivity was about1-10:1. Another preferred target Ge: SiO₂ selectivity was about 3-5:1.

As shown in FIG. 2, the removal rate of diluted Nalco 2360 slurry wastested. Wafers were polished with Nalco 2360 slurry diluted withde-ionized (DI) water. The CMP removal rates were determined for slurrymixtures with concentrations of Nalco 2360 varying from 4.5% to 100%.FIG. 2 illustrates oxide SiO₂ removal rates as a function of slurryconcentration and for various chemical additives.

Ge polished using no additives is illustrated in FIG. 2 for comparisonto diluted Nalco 2360 slurry in the slurry mix. FIG. 2 illustratesexemplary Ge RR data at 100% and 0% Nalco 2360. As shown in FIG. 2, theNalco 2360 concentration alone does not significantly affect the Gepolish rate 220, but oxide RR 210 is directly related to the amount ofNalco 2360 in the slurry mix.

Exemplary results for oxide RR 210 using slurry and oxide RR usingslurry with additives indicate Nalco 2360 concentration is the majorfactor controlling the oxide RR in all slurry mixes. While the oxideremoval rates for wafers polished with additives appear to have someeffect on the oxide RR as shown in FIG. 2, the effect appears to followthe same general trend as a slurry mix without additives, at least forthe concentrations tested. Thus, Nalco 2360 concentration is the majorfactor controlling the oxide RR. Using diluted slurry alone, thepreferred selectivity of Ge faster than SiO₂ was not achievable for anyconcentrations because of vibration (described below).

The Nalco 2360 slurry chosen for testing was intended to be selective inpolishing Ge rather than SiO₂. As shown in FIG. 2, an increasing oxideRR and a relatively constant Ge RR can result in selectivity >1 for Ge:SiO₂ at low concentrations of slurry (e.g., a slurry mix withapproximately <20% slurry). An unexpected result of the Nalco 2360choice was significant CMP tool vibration when polishing oxide waferswith slurry mixes containing low concentrations of Nalco 2360 in DIwater. A slurry mix containing below approximately 35% Nalco 2360 slurrygenerated debilitating vibration of the CMP tool and experimentally apreferred selectivity of Ge removal faster than SiO₂ was not achievable.

Although the Nalco 2360 slurry was successfully used experimentally,embodiments of the invention are not intended to be so limited. Forexample, particle size can range between 20-90 nm, 50-90 nm or 50-70 nmmay be used. Such particles may be spherical. Thus, colloidal or fumedslurry may be used. In addition, embodiments of a slurry mix can operatewith a pH range between 7-10, however, any pH sufficient for particlesto remain in suspension in a slurry mix can be used. Further, althoughcolloidal silica particles were used experimentally, alternativematerials for slurry particles (e.g., abrasives) can include ceria(e.g., CeO₂) or alumina (e.g., Al₂O₃). Alternative slurry mix can useparticles of similar size. Although these do not oxidize semiconductorcrystalline materials (e.g., Ge) during CMP as silica does, thefunctional operation of an abrasive can be sufficient in embodiments ofa slurry mix according to the invention. According to one embodiment,semiconductor crystalline materials that exhibit water soluble oxidationcan enhance polishing characteristics of a CMP process. Exemplary slurrymix according to one embodiment is preferred to not significantly polishor not to polish the insulator (e.g., dielectric, silicon nitride orSiO₂) confining the lattice-mismatched semiconductor crystallinematerials. Thus, in one embodiment, a slurry mix with diluted Nalco 2360achieved oxide RR below 70 nm/minute without CMP tool vibration.According to one embodiment, a lubricant can be used to reduce vibrationduring CMP, however, consideration (e.g., additional cleaningprocedures) should be made to reduce contaminants that can be added byexemplary lubricants.

FIG. 3 illustrates exemplary Ge and SiO₂ removal rates determined forslurry mixes containing NaOCl additives at low Nalco 2360concentrations. The incorporation of up to 2.4% NaOCl in the dilutedNalco 2360 slurry mix increases the Ge RR 310, as shown in FIG. 3. TheNaOCl-additive experiments were run at ˜4.5% Nalco 2360 and the toolvibration was not observed. Tool vibration was not observed while usingNaOCl in the slurry mix.

Although vibrations were not observed during CMP testing with NaOCladditives, significant vibrations were seen upon switching to NH₄OH andH₂O₂ additives. These vibrations are believed to be caused by highlevels of friction between the wafer and the pad for some slurrymixtures. In addition, the vibrations were evident only when polishingoxide films, and not when polishing Ge films.

NaOCl is believed to act as an additional lubricant at the wafer-padinterface, while the NH₄OH and H₂O₂ do not. Experimentally, minimumNalco 2360 concentrations of 30-35% were necessary to eliminatevibrations using NH₄OH and H₂O₂ additives. Such vibrations prevented CMPtesting the SiO₂ polish rate for low Nalco 2360 concentrations, and alsoin slurry mixes containing NH₄OH and H₂O₂ additives. Additionalspherical colloidal silica particles in the slurry mix appear tomoderate the friction at the oxide-CMP pad interface.

FIG. 4 illustrates exemplary results using cross-sectional SEM images ofGe ART sections of different trench widths polished with 1.4% NaOCI and4.7% Nalco 2360 in the slurry mix. As shown in FIG. 4, the trench widthsvary from approximately 200 nm to 400 nm. Cross-sectional SEM results inFIG. 4 illustrate significant dishing at 1.4% NaOCl. While overpolish isevident in FIG. 4 as well, the level of dishing on this sample isunacceptably high (e.g., for device fabrication).

FIG. 5 illustrates exemplary Ge removal rates determined for slurrymixes containing NH₄OH additives. As shown in FIG. 5, the slurry mixescontaining NH₄OH additives were experimentally tested at a minimum oxide(SiO₂) removal rate of 70 nm/min 510 at 30% Nalco 2360 in the slurry mixto avoid unacceptable tool vibration.

Adding NH₄OH to the diluted Nalco 2360 slurry did not enhance the Ge RRsignificantly. As shown in FIG. 5, NH₄OH concentrations below 10% withdiluted slurry nor 100% NH₄OH alone appreciably affected the Ge RR forthe respective slurry mix. With oxide removal rates at a level to avoidvibration, a preferred selectivity of Ge faster than SiO₂ was notexperimentally achievable for any NH₄OH concentrations in the slurrymix.

FIG. 6 illustrates exemplary results using cross-sectional SEM images ofGe ART sections of different trench widths polished with 2.8% NH4OH and4.6% Nalco 2360, where the Ge RR should have been higher than the oxideRR (oxide RR could not be measured at this low slurry concentrationbecause of vibration). The sample shown in FIG. 6 was polished despitevibrations, but polishing could not regularly occur using the slurry mixbecause of the vibration of the CMP tool. Dishing is also apparent inFIG. 6.

FIG. 7 illustrates Ge and SiO₂ removal rates determined for exemplaryslurry mixes containing H₂O₂ additives. Additional detail of Ge and SiO₂removal rates 710 determined for exemplary slurry mixes having a lowconcentration range between 0 and 0.3% H₂O₂ is shown to the right. Asshown in FIG. 7, slurry mix with low concentrations of H₂O₂(e.g., >0.05%) polishes Ge selectively to SiO₂ even with 35% Nalco 2360slurry in the slurry mix to avoid vibration. Further, an oxide removalrate 720 did not vary significantly up to 5% H₂O₂.

FIG. 8 illustrates exemplary results using cross-sectional SEM images ofGe ART sections polished with 0.16% H₂O₂ and 35% Nalco 2360 in theslurry mix. As shown in FIG. 8, dishing and overpolish are acceptable inthese pattern areas. In addition, overpolishing requirements can becontrolled by endpointing to a specific pattern of interest.

FIG. 9 illustrates a comparison of exemplary oxide and Ge removal ratesand selectivity determined for slurry mixes with the different additivechemicals. The graph is intended to show comparison of removal rates andGe/SiO₂ selectivity only, and therefore, slurry and additiveconcentrations are not the same. In FIG. 9, the data presented(left-to-right) for each slurry mix is SiO₂ RR 910, Ge maximum RR 920and Ge minimum RR 930. As illustrated in FIG. 9, the addition of H₂O₂ tothe diluted slurry provided results sufficient for device fabricationand the best results based on the selectivity and/or dishing (e.g., seeSEM results described above).

In addition to removal rate and selectivity, each of the primary threediluted slurry-additive combinations was tested for concentration ofselected metallic elements at the wafer surface post-CMP. Wafer surfacespost-CMP were tested for more than 25 contaminant materials andcollected data 1010, 1020, 1030 is respectively shown in FIG. 10. Inaddition, FIG. 10 illustrates data for an oxide CMP process 1040performed on the Strasbaugh CMP (e.g., for comparison to the H₂O₂ data1010 and NH₄OH data 1020) and data 1050 for a wafer exposed to NaOCl andrinsed. As shown in FIG. 10, NH₄OH added to the slurry mix has thelowest metals levels of the three additives.

Further, high metals in data 1050 observed on a wafer after exposure toNaOCI show that the levels on a wafer post-CMP can be caused bycontamination from the NaOCI solution. Such high levels of contaminantmetals (and dishing observed when using NaOCI additive) in the slurrymix are not acceptable for post-CMP device fabrication.

As shown in FIG. 10, some metals levels (e.g., Mg) for polishing withH₂O₂ in the slurry mix are higher than acceptable levels for post-CMPdevice fabrication, but this additive had the best performance incoplanar CMP. Such acceptable levels can be generally 5×10¹⁰/cm² orless. A cleaning step was devised to follow the megasonic post-CMP cleanthat included a DI water rinse and hydrofluoric acid (HF) dip. Ge mayetch slightly in this cleaning step. After the water rinse and HF dip,metals levels were reduced to acceptable levels for samples polishedwith the H₂O₂ -containing slurry mix.

From the exemplary experimental data, H₂O₂ was the chemical additive tothe slurry mix with superior performance in terms of removal rate andselectivity (e.g., FIGS. 7 and 9), and contaminant or metals levelspost-CMP (e.g., FIG. 10). A successful CMP planarization using anembodiment of a CMP composition according to the present generalinventive concept is illustrated in FIG. 11( b). FIGS. 11( a) and 11(b)illustrate respective cross-sectional SEM images of germanium structurebefore and after CMP with H₂O₂ additive (here 0.16% H₂O₂) in the slurrymix.

According to embodiments of the invention, sufficient planarizationresults in the ability to implement the planarized lattice-mismatchedsemiconductor material or composite crystalline/insulator structure,which may be formed using ART techniques, in a semiconductor device. Inone embodiment, dishing is preferably less than 50 nm, less than 30 nm,less than 20 nm or less than 10 nm. The surface smoothness can bemeasured by a surface roughness Rms (root mean square). Rms of the Ge ina Ge/oxide composite structure was calculated only on the Ge area anddid not include the oxide. The overall Rms value can reflect variationsof Ge surface height from one trench to another, within a trench oralong the length of the trenches. In one embodiment, the surfaceroughness (Rms) is preferably less than 20 nm, less than 10 nm less than5 nm, less than 3 nm, or less than about 1 nm, and may be less than 0.5nm or less than 0.2 nm. In one embodiment, overpolishing is asignificant concern for reduced device dimensions corresponding to theexemplary disclosed devices. In one embodiment, overpolishing ispreferably less than 50 nm, less than 10 nm, less than 5 nm or less than2 nm. In one embodiment, the step height is less than 30 nm, less than20 nm, less than 15 nm or less than 10 nm. As illustrated in FIG. 11(b), exemplary results of CMP according to embodiments of the inventionsatisfy prescribed or required coplanar characteristics of the polishedsurface.

In addition, for CMP of Ge ART, a Ge:SiO₂ polish selectivity of about5:1 is preferred. This exemplary selectivity can reduce or preventsignificant overpolish or dishing. As described above, embodiments of aslurry mix using H₂O₂ were able to provide the prescribed selectivity.

Once slurry mix chemistry was determined (e.g., Nalco 2360, H₂O₂, and DIwater), process and performance improvement for embodiments of theinvention were tested (e.g., on the Ge ART samples). For example,embodiments of the invention were tested to determine the effects ofH₂O₂ concentrations on removal rates for various compositions andprocess considerations for characteristic CMP results (e.g., a moreeffective CMP process). Additional factors to consider when evaluatingremoval rate data for various concentrations of H₂O₂ additive in theslurry mix include pitting and polish time. Dishing can increase whenselectivity increases. In addition, removal rates that are too low canunduly increase polish time.

Pitera disclosed pitting occurred during CMP on Si/Ge materialcombinations when using H₂O₂, but avoided the problem by adding anadditional oxide layer that was then polished using known CMPtechniques. FIGS. 12( a) and 12(b) confirm such results for relativelyhigh H₂O₂ concentrations. FIGS. 12( a) and 12(b) illustrate pitting 1210in plan-view SEM for a Ge blanket film sample polished with 10% H₂O₂ inthe slurry mix and trench Ge ART samples polished with 5% H₂O₂ in theslurry mix, respectively.

At one preferred concentration of 0.16% H₂O₂ in a slurry mix, pitting ofthe Ge surface was not detected. FIG. 13 illustrates a 2 μm×2 μm AFMscan of a Ge ART sample polished with 0.16% H₂O₂ in the slurry mix. InFIG. 13, dishing is 30 nm, and RMS roughness (of Ge areas in a Ge ARTsample) measured by AFM is 0.21 nm. As shown in FIG. 13, decreasingconcentration of H₂O₂ was able control or decrease pitting effects inCMP for Ge.

Dishing can vary with concentration of H₂O₂ in the slurry mix, rangingfrom unacceptable levels at high concentrations (e.g., over 5% H₂O₂concentration) to ˜20-50 nm for 200-375 nm wide Ge ART trenches at 0.16%H₂O₂. FIGS. 14( a) and 14(b) respectively illustrate such differencespost-CMP using an SEM image of an unacceptably dished sample (5% H₂O₂)and a TEM image of polished Ge ART at 0.16% H₂O₂, respectively.

Most of the samples presented here were used a post-CMP megasonic clean(except those polished using NaOCI additive in the slurry mix, becausethe equipment was not available at that time). Samples that required lowmetals also used a water rinse and HF dip (primarily used for samplesthat underwent additional processing post-CMP). The megasonic cleaningused SC-1 chemistry for all oxide wafers, but SC-1 chemistry wasdetected to etch Ge even at low concentrations (e.g., primarily causedby the H₂O₂). Since etching occurred even at low concentration, DI wateronly was then used in the megasonic clean for all the Ge samples (e.g.,blanket film and Ge ART). The DI water-only megasonic clean waseffective for slurry particle removal on the Ge samples, except wheresample topography (for example incomplete planarization) preventedslurry from escaping the surface.

Effect of Coalescence on CMP

All of the post-CMP Ge ART samples described above used pre-CMPstructures that coalesced over the oxide trenches during growth (e.g.,see FIG. 11( a)). The selective Ge growth caused each of the patternedareas to have a different thickness of coalescence over the trenches,which leads to different elapsed polish times to reach coplanar Ge ARTfor each patterned area. However, the lattice-mismatched semiconductormaterials (e.g., Ge) do not need to coalesce over the oxide trenches ifa CMP process can effectively planarize uncoalesced crystalline growthabove a top surface of the oxide trench. At the tested concentration ofH₂O₂ (e.g., 0.16% H₂O₂) in the slurry mix, exemplary polish time for anuncoalesced Ge ART wafer to reach coplanar is typically less than aminute. However, a CMP process does not tend to reach a steady stateuntil after about a minute of polish. Accordingly, control of a shortprocess for the uncoalesced Ge ART could not be guaranteed in testedsamples. In this situation, it may help that the SiO₂ patterning slowsthe polish rate as the structure begins to clear.

Initial investigations of the effect of coalescence on Ge ART CMPaddressed coalescence effects on the clearing behavior of the structuresduring CMP, so polish controllability was not evaluated. Analysis ofpolished samples of “thin coalesced” and uncoalesced samples focused ondishing and overpolish as a function of polish time for four differentpatterned regions, for example, as shown in FIG. 15.

Combined data for several samples is presented in FIG. 15; thincoalesced samples are on the left side of the graph, uncoalesced on theright. Times listed at the bottom of the chart reflect the polish step;where two times are listed “X+Xsec”, two polishes were done on thesample. The original oxide pattern film thickness on this sample wasapproximately 490 nm. A 500 nm thickness reference point is illustratedin FIG. 15.

Exemplary Ge thickness, dishing, and overpolish for four differentpatterned areas (e.g., patterns A-D) of thin coalesced and uncoalescedGe ART wafers polished in 0.16% H₂O₂ -containing slurry mix fordifferent times are shown in FIG. 15. The colored bars represent theresulting thickness of the Ge in the trenches (e.g., for a givenpatterned area and for a given wafer/CMP time) measured from the bottomof the oxide patterning to the bottom of any dishing that may haveoccurred. “Error bars” are used to show the level of the oxide post-CMP.If the error bar ends below the height of the Ge thickness bar, the Geis under polished and some Ge remains above the patterned oxide. If theerror bar ends above the height of the Ge thickness bar, the oxideheight is greater than that of the Ge, and therefore the length of theerror bar reflects the amount of dishing in the Ge. Finally, if the endof the error bar lies below the 500 nm horizontal line on the graph, thedifference between the end of the error bar and the 500 nm line reflectshow much overpolish occurred for that patterned area on that sample.

An enormous amount can be learned from the data presented in FIG. 15.First, comparing the thin coalesced vs. uncoalesced samples, it isinteresting to note that the A section clears before the B section inuncoalesced, but the reverse is true for thin coalesced. Also, theamount of overpolish evident in thin coalesced sections C and D (beforesection A is completely cleared) is much more significant than thatobserved for the uncoalesced samples when all four sections are cleared.It seems that in order to more effectively clear all four sectionswithout significant overpolish in any of the sections, polishinguncoalesced samples is better. For thin coalesced samples, after twoone-minute polishes, section A is not yet cleared, while the filmremaining in section D is rapidly approaching its dislocation trappingregion. On the other hand, if the primary sections of interest for agiven sample are C and D, the polish time for an uncoalesced samplewould be extraordinarily short, and it would be better to polish from athin coalesced sample. Only one of the samples tested here used anetching clean (e.g., low concentrations of H₂O₂ in the megasonicpost-CMP clean), and it is clear that this sample had more significantdishing than the other samples shown. In addition, some difference canbe observed between the two thin coalesced samples with similarpolishing times (75 seconds in one polish and 60+15 seconds in twopolishes). It seems from these two samples that the ramp-up andramp-down steps in the CMP do polish a small amount.

Exemplary embodiments of planarized latticed mismatched material andinsulator composite structures, CMP compositions and methods for usingthe same described above used undoped semiconductor material. However,the present general inventive concept can be applied to n-dopedsemiconductor materials or p-doped semiconductor materials at knownconcentration for devices such as those described above with similar CMPresults. Further, in one embodiment a substrate can be a semiconductorpolycrystalline material, semiconductor amorphous material or aninsulator (e.g., glass).

Exemplary embodiments of planarized lattice-mismatched material andinsulator composite structures, CMP compositions and methods for usingthe same described above used low removal rates. Such removal rates canbe 400 nm/minute or less, 300 nm/minute or less, 200 nm/minute or less,100 nm/minute or less to as low as 60 nm/minute.

A method embodiment for making a semiconductor device having a firstcrystalline material confined in recess defined by an insulator will nowbe described with reference to FIG. 16. The first crystalline materialcan have a top surface above the insulator. Initially, a firstcrystalline material confined in recess having prescribed dimensionsdefined by an insulator is provided.

After a process starts, planarize a surface of the first crystallinematerial of a composite first crystalline material/insulator structureto have a surface roughness RMS of less than 5 nm (operation block1610). A planarization operation can include a CMP of the compositefirst crystalline material/insulator structure using a slurry mix havinga selectivity >1 (e.g., a selectivity of 3-5:1) of the first crystallinematerial:insulator in a repeatable polishing sequence that results in acoplanar planarized surface of the first crystalline material andinsulator.

Form an additional component of the semiconductor device within, at, onand/or over at least the planarized top surface of the first crystallinematerial (operation block 1620). In one embodiment, adjacent planarizedsurfaces of the insulator and the first crystalline material havedishing less than 20 nm.

Complete the semiconductor device (operation block 1630).

Exemplary embodiments of, CMP compositions and methods for using thesame described above can be used to polish or planarize first and secondmaterial composite structures. One exemplary composite structure can bean insulator adjacent or confining a semiconductor crystalline material,semiconductor polycrystalline material or semiconductor amorphousmaterial. Another exemplary composite structure can be an a firstsemiconductor crystalline material, first semiconductor polycrystallinematerial or first semiconductor amorphous material adjacent or confininga second semiconductor crystalline material, second semiconductorpolycrystalline material or second semiconductor amorphous materialprovided the selectivity of the second material is greater than thefirst material in accordance with example embodiments. Exemplary firstand second adjacent materials can have micron or submicron dimensions.In one embodiment, the second material dimension can be of any size.

In one embodiment the first crystalline material is a lattice-mismatchedsemiconductor material. In another embodiment, the first crystallinematerial has a coalesced top surface connecting first crystallinematerial from a plurality of adjacent recesses. In one embodiment, therecess is a hole, trench, or a plurality of trenches each having aprescribed cross-section. In one embodiment, the insulator has anopening to a substrate of a second crystalline materiallattice-mismatched to the first crystalline material. In one embodiment,the first crystalline material confined in the recess defined by theinsulator was formed using ART techniques. In one embodiment, the secondcrystalline material may include a group IV element or compound, such asgermanium and/or silicon, and the first crystalline material may includeat least one of a group IV element or compound, a III-V or III-Ncompound, or a II-VI compound. While exemplary embodiments may beeffective for various materials like a group III-V compound or group IVmaterial like silicon, oxidation during a CMP process may vary. Thus,polishing of materials including semiconductor crystallinelattice-mismatched materials where water soluble oxidation results canenhance polishing characteristics or interactions corresponding to a CMPprocess.

In an embodiment, a post-CMP clean of the planarized surface can beperformed. The post-CMP clean can be a megasonic clean using DI water.

As described above, embodiments of CMP process can planarizelattice-mismatched materials and lattice-mismatched material/insulatorcomposite structures effectively. Further, embodiments can planarizefirst material adjacent second material combinations for use insemiconductor device applications including incorporation with CMOStechniques, processes and devices. Embodiments of devices according tothe application can include planarized composite structures. Embodimentsaccording to the application can include CMP compositions. Oneembodiment of a CMP process can planarize Ge in oxide trenches on Sisubstrates generated by Aspect Ratio Trapping techniques. An exemplaryslurry mix according to one embodiment included 35% colloidal silicasub-micron particles, 0.1% -0.3% H₂O₂ 30% solution, and Dl water slurrymix to provide a desired combination of selectivity and post-CMPcoplanar surface characteristics, for example using crystallinematerials confined by insulators formed using ART techniques, and lowsurface metal contamination. One slurry mix embodiment and a post-CMPcleaning embodiment were used to polish a variety of coalesced anduncoalesced Ge ART samples to coplanar Ge—SiO₂. Embodiments of CMPprocess according to the invention can be used in heterointegration byART techniques. Embodiments of CMP process can be used to createplanarized areas of defect-free Ge on a Si wafer and devices createdthereby. Such structures can be used for high mobility, non-Si channelMOSFETs for next generation CMOS and for a wide variety of otherapplications.

As noted above, this invention has a wide variety of applications. Whilenot limited to ART technology, this invention has many applicationswithin ART technology. For example, use of this invention may be used tocreate strained Ge over a SiGe alloy grown in an opening within aninsulator. One or both of the Ge and adjacent microstructure may bepolished in accordance with the invention and/or may have a surface ofreduced roughness. A wide variety of devices may incorporate aspects ofthe invention. While not limiting to these devices, the invention may beparticularly applicable to mixed signal applications, field effecttransistors, quantum tunneling devices, light emitting diodes, laserdiodes, resonant tunneling diodes and photovoltaic devices, especiallythose using ART technology. application Ser. No. 11/857047 filed Sep.18, 2007 entitled “Aspect Ratio Trapping for Mixed Signal Applications”;application Ser. No. 11/861931 filed Sep. 26, 2007 entitled “Tri-GateField-Effect Transistors formed by Aspect Ratio Trapping”; applicationSer. No. 11/862850 filed Sep. 27, 2007 entitled “Quantum TunnelingDevices and Circuits with Lattice-mismatched Semiconductor Structures”;application Ser. No. 11/875381 filed Oct. 19, 2007 entitled“Light-Emitter-Based Devices with Lattice-mismatched SemiconductorStructures”; and application Ser. No. 12/100,131 filed Apr. 9, 2007entitled “Photovoltaics on Silicon” are all hereby incorporated byreference as providing examples to which aspects of this invention maybe particularly suited.

Any reference in this specification to “one embodiment,” “anembodiment,” “example embodiment,” etc., means that a particularfeature, structure, or characteristic described in connection with theembodiment can be included or combined in at least one embodiment of theinvention. The appearances of such phrases in various places in thespecification are not necessarily all referring to the same embodiment.Further, when a particular feature, structure, or characteristic isdescribed in connection with any embodiment, it is submitted that it iswithin the purview of one skilled in the art to affect such feature,structure, or characteristic in connection with other ones of theembodiments. Furthermore, for ease of understanding, certain methodprocedures may have been delineated as separate procedures; however,these separately delineated procedures should not be construed asnecessarily order dependent in their performance. That is, someprocedures may be able to be performed in an alternative ordering,simultaneously, etc. In addition, exemplary diagrams illustrate variousmethods in accordance with embodiments of the present disclosure. Suchexemplary method embodiments are described herein using and can beapplied to corresponding apparatus embodiments, however, the methodembodiments are not intended to be limited thereby.

Although few embodiments of the present invention have been illustratedand described, it would be appreciated by those skilled in the art thatchanges may be made in these embodiments without departing from theprinciples and spirit of the invention. The foregoing embodiments aretherefore to be considered in all respects illustrative rather thanlimiting on the invention described herein. Scope of the invention isthus indicated by the appended claims rather than by the foregoingdescription, and all changes which come within the meaning and range ofequivalency of the claims are intended to be embraced therein. As usedin this disclosure, the term “preferably” is non-exclusive and means“preferably, but not limited to.” Terms in the claims should be giventheir broadest interpretation consistent with the general inventiveconcept as set forth in this description. For example, the terms“coupled” and “connect” (and derivations thereof) are used to connoteboth direct and indirect connections/couplings. As another example,“having” and “including”, derivatives thereof and similar transitionalterms or phrases are used synonymously with “comprising” (i.e., all areconsidered “open ended” terms)—only the phrases “consisting of” and“consisting essentially of” should be considered as “close ended”.Claims are not intended to be interpreted under 112 sixth paragraphunless the phrase “means for” and an associated function appear in aclaim and the claim fails to recite sufficient structure to perform suchfunction.

1. A semiconductor structure comprising: a semiconductor crystallinesubstrate; an insulator having an opening to the substrate; asemiconductor crystalline material within the opening in the insulator,the crystalline material being lattice-mismatched with the substrate andhaving a planarized top surface with a root mean square surfaceroughness of 15 nm or less for the semiconductor crystalline material.2. The structure of claim 1, wherein the substrate is configured withdepressions in the substrate, and wherein the insulator overlies sidesof the depression to form said opening.
 3. The structure of claim 1,wherein the insulator is formed over the substrate, and wherein portionsof the insulator over a top surface of the substrate are removed to formsaid opening.
 4. The structure of claim 1, wherein the planarized topsurface is polished by a slurry comprising an abrasive, less than 0.3%H₂O₂ 30% solution and water.
 5. The structure of claim 4, wherein theabrasive is suspended silica sub-micron particles, suspended ceriasub-micron particles or suspended alumina sub-micron particles, whereinthe particles are between 20-90 nm in size, between 50-70 nm in size orspherical and approximately 60 nm in size.
 6. The structure of claim 4,wherein the slurry mix is between 0.1% and 0.2% H₂O₂ 30% solution orabout 0.15% H₂O₂.30% solution.
 7. The structure of claim 4, whereinpolish selectivity of the crystalline material:the insulator is greaterthan 1:1, 3:1 or 5:1.
 8. The structure of claim 1, wherein the openingis a trench, recess or hole.
 9. The structure of claim 1, wherein thecrystalline material is epitaxially grown.
 10. The structure of claim 1,wherein the crystalline material is a group Ill-V compound or germanium.11. The structure of claim 1, wherein the substrate comprises a singlecrystal substrate, a polycrystalline substrate or an amorphoussubstrate.
 12. The structure of claim 11, wherein a surface of thesubstrate exposed in the insulator opening is a (001) surface of thesilicon substrate, and wherein the substrate is a single crystalsubstrate.
 13. The structure of claim 1, wherein dishing is below 50 nm,20 nm or 10 nm.
 14. The structure of claim 1, wherein the planarizedsurface of the crystalline material has a surface roughness RMS of 15 nmor less, about 10 nm or less, about 5 nm or less, about 1 nm or less,about 0.5 nm or less, or no greater than 0.2 nm.
 15. A method ofmanufacturing a semiconductor structure comprising: providing asemiconductor crystalline substrate; providing an insulator having anopening to the substrate; forming a semiconductor crystalline materialwithin the opening in the insulator, the crystalline material beinglattice-mismatched with the substrate; and planarizing top surfaces ofthe insulator and crystalline material to be coplanar within 20 nm. 16.The method of claim 15, wherein the surface roughness is 20 nm or less,10 nm or less, 5 nm or less, 1 nm or less, 0.5 nm or less, or 0.2 nm orless.
 17. The method of claim 15, wherein forming the crystallinematerial comprises trapping defects of the crystalline material (arisingfrom the lattice mismatch) at sidewalls of openings of the insulator.18. The method of claim 15, further comprising: etching the substrate tocreate depressions in the crystalline substrate; and forming theinsulator over the etched substrate in conformance to the substratesurface to create said sidewalls from an outer surface of the formedinsulator.
 19. The method of claim 15, wherein said planarizingcomprises a ramp-up, polishing, ramp-down and rinse.
 20. A semiconductordevice comprising: a substrate; a first material having a plurality ofopenings in a surface; a semiconductor crystalline material within theopenings in the first material wherein the openings has an aspect ratiosufficient to trap defects in the crystalline material; and asubstantially planar top surface of a composite structure of the firstand the crystalline material, wherein the semiconductor crystallinematerial has a submicron dimension.